Professor Matt Phillips

Remond, G., Phillips, M.R. & Roques-Carmes, C. 2000, 'Importance of Instrumental Factors on the Reliability of Cathodoluminescence Data' in Pagel M; Barbin V; Blanc P; Ohnenstetter D (eds), Cathodoluminescence in Geosciences, Springer-Verlag, Berlin, Germany, pp. 59-126.

Stevens-Kalceff, M.A., Phillips, M.R., Moon, A.R. & Kalceff, W. 2000, 'Cathodoluminescence Microcharacterisation of Silicon Dioxide Polymorphs' in Pagel M; Barbin V; Blanc P; Ohnenstetter D (eds), Cathodoluminescence in Geosciences, Springer-Verlag, Berlin, Germany, pp. 193-224.

Davis, J., Short, K., Wuhrer, R., Phillips, M.R., Lumpkin, G.R. & Whittle, K.R. 2013, 'Electron backscatter diffraction characterization of plasma immersion ion implantation effects in stainless steel', Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms, vol. 295, pp. 38-41.
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In these experiments plasma immersion ion implantation is utilised to simulate some of the radiation effects in a nuclear reactor environment. Scanning electron microscopy using the angular selective backscatter detector has revealed observable changes in crystallographic contrast after irradiation with helium ions. Further studies using electron backscatter diffraction in both plan and cross section view allow us to visualize the extent and depth of damage and observe differences in the behavior of different crystalline phases present in several grades of stainless steel.

Bishop, J., Toth, M., Phillips, M.R. & Lobo, C. 2012, 'Effects of oxygen on electron beam induced deposition of SiO2 using physisorbed and chemisorbed tetraethoxysilane', Applied Physics Letters, vol. 101, p. 211605.
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Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O2 with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO2 at room temperature. Here, we show that O2 inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O2 at room temperature.

Bishop, J.D., Lobo, C., Martin, A.A., Ford, M.J., Phillips, M.R. & Toth, M. 2012, 'Role of activated chemisorption in gas-mediated electron beam induced deposition', Physical Review Letters, vol. 109, p. 146103.
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Models of adsorbate dissociation by energetic electrons are generalized to account for activated sticking and chemisorption, and used to simulate the rate kinetics of electron beam induced chemical vapor deposition (EBID). The model predicts a novel temperature dependence caused by thermal transitions from physisorbed to chemisorbed states that govern adsorbate coverage and EBID rates at elevated temperatures. We verify these results by experiments that also show how EBID can be used to deposit high purity materials and characterize the rates and energy barriers that govern adsorption.

Demers, H., Poirier-demers, N., Phillips, M.R., De Jonge, N. & Drouin, D. 2012, 'Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in gan and electron-beam lithography exposure parameters for a PMMA resist', Microscopy & Microanalysis, vol. 18, no. 6, pp. 1220-1228.
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The Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimens

Lobo, C., Martin, A.A., Phillips, M.R. & Toth, M. 2012, 'Electron beam induced chemical dry etching and imaging in gaseous NH3 environments', Nanotechnology, vol. 23, p. 375302.
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We report the use of ammonia (NH3) vapor as a new precursor for nanoscale electron beam induced etching (EBIE) of carbon, and an efficient imaging medium for environmental scanning electron microscopy (ESEM). Etching is demonstrated using amorphous carbonaceous nanowires grown by electron beam induced deposition (EBID). It is ascribed to carbon volatilization by hydrogen radicals generated by electron dissociation of NH3 adsorbates. The volatilization process is also effective at preventing the buildup of residual hydrocarbon impurities that often compromise EBIE, EBID and electron imaging. We also show that ammonia is a more efficient electron imaging medium than H2O, which up to now has been the most commonly used ESEM imaging gas.

Roczen, M., Schade, M., Malguth, E., Callsen, G., Barthel, T., Gref, O., Tofflinger, J.A., Schopke, A., Schmidt, M., Leipner, H., Ruske, F., Phillips, M.R., Hoffmann, A., Korte, L. & Rech, B. 2012, 'Structural Investigations Of Silicon Nanostructures Grown By Self-organized Island Formation For Photovoltaic Applications', Applied Physics A: Materials Science & Processing, vol. 108, no. 3, pp. 719-726.
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The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm) oxid

Ton-That, C., Weston, L. & Phillips, M.R. 2012, 'Characteristics of point defects in the green luminescence from Zn- and O-rich ZnO', Physical Review B, vol. 86, no. 11, p. 115205.
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Cathodoluminescence spectra have been measured to determine the characteristics of ubiquitous green luminescence (GL) in nonstoichiometric zinc oxide (ZnO). Zn- and O-rich ZnO were found to exhibit characteristic emissions at 2.53 eV [full width at half-maximum (FWHM) 340 meV] and 2.30 eV (FWHM 450 meV), respectively. Hydrogen was used to probe the physical nature of GL centers. The Zn-rich GL is enhanced upon H incorporation, whereas the O-rich GL is completely quenched as its underlying acceptor-like V-Zn centers are passivated by H. The GL emission bands each exhibit remarkably different excitation-power dependencies. The Zn-rich GL follows a close to linear relationship with excitation power, while the O-rich GL exhibits a square-root dependence. Calculations based on bimolecular recombination equations show the defect concentration in Zn-rich ZnO is three orders of magnitude greater than that in O-rich ZnO, indicating V-O is more readily formed than V-Zn in thermochemical treatments of ZnO.

Ton-That, C., Foley, M., Phillips, M.R., Tsuzuki, T. & Smith, Z. 2012, 'Correlation between the structural and optical properties of Mn-doped ZnO', Journal Of Alloys And Compounds, vol. 522, pp. 114-117.
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The crystallographic and optical properties of Mn-doped ZnO nanoparticles prepared by a sol-gel process have been investigated by X-ray diffraction, UV-visible absorption spectroscopy and cathodoluminescence microanalysis. X-ray diffraction reveals that the nanoparticles have hexagonal wurtzite crystal structure, with the lattice constants along the a-and c-axes increasing with increasing Mn concentration from 0 to 2.4 at%. For all Mn concentrations in this range, the nanoparticles are essentially free of native point defects so that they exhibit only band-edge luminescence. The optical bandgap and band-edge emission energies for Mn-doped ZnO were found to increase in proportion to the lattice constants. The direct correlation between the bandgap and crystal structure suggests that the band-edge optical properties of Mn-doped ZnO is predominantly influenced by the amount of Mn atoms substituting Zn on the lattice sites.

Weston, L., Ton-That, C. & Phillips, M.R. 2012, 'Doping properties of hydrogen in ZnO', Journal of Materials Research, vol. 27, no. 17, pp. 2220-2224.
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The doping properties and stability of hydrogen in zinc oxide (ZnO) crystals have been investigated by cathodoluminescence (CL) spectroscopy. Hydrogen incorporation was achieved by hydrogen plasma at 200 ¦C. The ZnO near-band-edge (NBE) peak is dramatically enhanced, while the green emission at 2.4 eV is quenched with increasing hydrogen incorporation. These effects are attributed to hydrogen passivating green luminescence centers, which are most likely negatively charged zinc vacancy defects. E-beam irradiation of H-doped ZnO crystals by an intense electron beam with ÁW power reverses the hydrogen doping process. This effect is ascribed to the dissociation of H-related defects, formation of Chidden H2, and electromigration of H + under the influence of the local trapped charge-induced electric field. These results highlight the potential to modify the local luminescent properties of ZnO by e-beam irradiation

Callsen, G., Reparaz, J., Wagner, M.R., Kirste, R., Nenstiel, C., Hoffmann, A.V. & Phillips, M.R. 2011, 'Phonon Deformation Potentials In Wurtzite Gan And Zno Determined By Uniaxial Pressure Dependent Raman Measurements', Applied Physics Letters, vol. 98, no. 6, pp. 1-3.
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We report the phonon deformation potentials of wurtzite GaN and ZnO for all zone center optical phonon modes determined by Raman measurements as a function of uniaxial pressure. Despite all the structural and optical similarities between these two materi

Callsen, G., Reparaz, J., Wagner, M.R., Vierck, A., Phillips, M.R., Thomsen, C. & Hoffmann, A.V. 2011, 'Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies', Nanotechnology, vol. 22, no. 40, p. 405604.
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We report on an oxide-assisted growth technique for silica nanowires which allows tuning the growth from surface-matched nanowires to free-standing morphologies based on growth control by Ti in the role of a catalyst and surfactant. Using an adjustable Ti concentration, we grew silica nanowires with lengths ranging from 100 nm up to several millimetres whose defect chemistry was analysed by electron microscopy tools, monochromatic cathodoluminescence imaging and time resolved photoluminescence spectroscopy. The knowledge of the luminescence properties and the related defect occurrence along with their spatial distribution is pivotal for advancing silica nanowire growth in order to realize successful device designs based on self-assembled Si/SiO(x) nanostructures. We demonstrate a core-shell structure of the grown nanowires with a highly luminescent 150 nm thick shell and outstandingly fast decaying dynamics (approximate to 1 ns) for glass-like materials. The conjunction of the observed efficient and stable luminescences with their attributed decaying behaviours suggests applications for silica nanowires such as active and passive optical interconnectors and white light phosphors. The identification of a time domain difference for the spectral regime from 2.3 to 3.3 eV, within the confined spatial dimensions of a single nanowire, is very promising for future, e. g. data transmission applications, employing silica nanowires which exhibit achievable compatibility with commonly applied silicon-based electronics. A qualitative growth model based on silica particle diffusion and Ti-assisted seed formation is developed for the various types of segregated silica nanowires which extends commonly assumed oxide-assisted growth mechanisms.

Chen, P., Downes, J., Fernandes, A., Butcher, K., Wintrebert-Fouquet, M., Wuhrer, R. & Phillips, M.R. 2011, 'Effects Of Crystallinity And Chemical Variation On Apparent Band-gap Shift In Polycrystalline Indium Nitride', Thin Solid Films, vol. 519, no. 6, pp. 1831-1836.
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The nature of the apparent band-gap shift in polycrystalline indium nitride thin-films, grown by remote-plasma-enhanced chemical vapour deposition at 535 +/- 10 degrees C. has been investigated separately in relation to growth temperature dependent crystallinity and chemical variation. Substrates of sapphire and gallium nitride on sapphire were used to study the effect of a stress-reduced template on indium nitride crystallite quality and apparent band-gap. To mimic surface growth temperature variations two glass substrates of differing thickness and thermal conductivity were intentionally used for the same growth conditions. The samples were characterised using optical transmission, scanning electron microscope, X-ray diffraction, and high-resolution X-ray photoelectron spectroscopy. The results indicate that the apparent band-gap shift in polycrystalline narrow band-gap indium nitride thin-films is not primarily determined by the quality of indium nitride crystallites but rather it is associated with growth temperature dependent chemical variations in the films

Lem, L.L., Ton-That, C. & Phillips, M.R. 2011, 'Distribution of visible luminescence centers in hydrogen-doped ZnO', Journal of Materials Research, vol. 26, no. 23, pp. 2912-2915.
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ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge ( NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization.

Lin, Z., Li, Y., Zhu, J., Wang, X., Dou, S.X., Guo, Y., Lei, G., Wang, Y., Phillips, M.R., Cortie, M.B., Li, Y., Choi, K. & Shi, X. 2011, 'Visualization Of Vortex Motion In Feas-Based Bafe(1.9)Ni(0.1)As(2) Single Crystal By Means Of Magneto-Optical Imaging', Journal Of Applied Physics, vol. 109, no. 7, pp. 0-0.
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Superconductivity has been found in newly discovered iron-based compounds. This paper studies the motion of magnetic vortices in BaFe(1.9)Ni(0.1)As(2) single crystal by means of the magneto-optical imaging technique. A series of magneto-optical images re

Lockrey, M.N. & Phillips, M.R. 2011, 'Characterisation Of The Optical Properties Of InGaN MQW Structures Using A Combined Sem And Cl Spectral Mapping System', Journal of Semiconductors, vol. 32, no. 1, pp. 0-0.
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We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized.

Sprouster, D.J., Ruffell, S., Bradby, J.E., Williams, J.S., Lockrey, M.N., Phillips, M.R., Major, R.C. & Warren, O.L. 2011, 'Structural characterization of B-doped diamond nanoindentation tips', Journal of Materials Research, vol. 26, no. 24, pp. 3051-3057.
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Wagner, M.R., Callsen, G., Reparaz, J., Schulze, J., Kirste, R., Cobet, M., Ostapenko, I., Rodt, S., Nenstiel, C., Kaiser, M., Hoffmann, A.V., Rodina, A., Phillips, M.R., Lautenschlager, S., Eisermann, S. & Meyer, B.K. 2011, 'Bound Excitons In Zno: Structural Defect Complexes Versus Shallow Impurity Centers', Physical Review B, vol. 84, no. 3, pp. 035313-1-0.
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ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to deeply bound excitons (Y lines). In this work, we present a comprehensive study of the properties of the deeply bound excitons with particular focus on the Y(0) transition at 3.333 eV. The electronic and optical properties of these centers are compared to those of the shallow impurity related exciton binding centers (I lines). In contrast to the shallow donors in ZnO, the deeply bound exciton complexes exhibit a large discrepancy between the thermal activation energy and localization energy of the excitons and cannot be described by an effective mass approach. The different properties between the shallow and deeply bound excitons are also reflected by an exceptionally small coupling of the deep centers to the lattice phonons and a small splitting between their two electron satellite transitions. Based on a multitude of different experimental results including magnetophotoluminescence, magnetoabsorption, excitation spectroscopy (PLE), time resolved photoluminescence (TRPL), and uniaxial pressure measurements, a qualitative defect model is developed which explains all Y lines as radiative recombinations of excitons bound to extended structural defect complexes. These defect complexes introduce additional donor states in ZnO. Furthermore, the spatially localized character of the defect centers is visualized in contrast to the homogeneous distribution of shallow impurity centers by monochromatic cathodoluminescence imaging. A possible relation between the defect bound excitons and the green luminescence band in ZnO is discussed. The optical properties of the defect transitions are compared to similar luminescence lines related to defect and dislocation bound excitons in other II-VI and III-V semiconductors.

Coutts, M.J., Zareie, H.M., Cortie, M.B., Phillips, M.R., Wuhrer, R. & McDonagh, A.M. 2010, 'Exploiting Zinc Oxide Re-Emission To Fabricate Periodic Arrays', ACS Applied Materials & Interfaces, vol. 2, no. 6, pp. 1774-1779.
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The synthesis of hexagonal ring-shaped structures of zinc oxide using nanosphere lithography and metal/metal oxide sputtering is demonstrated. This synthesis exploits the surface re-emission of zinc oxide to deposit material in regions lying out of the l

Foley, M., Ton-That, C. & Phillips, M.R. 2010, 'Luminescent properties of ZnO structures grown with a vapour transport method', Thin Solid Films, vol. 518, no. 15, pp. 4231-4233.
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ZnO structures were synthesised on the sapphire (112 + 0) substrate by a vapour transport method in a gas !owing furnace. The in!uence of the oxygen content in the gas mixture on the morphology and luminescent properties of ZnO structures grown on a strip-like substrate was investigated, with all other growth parameters being kept nominally identical. Integrated electron microscopy and cathodoluminescence analysis shows gradual variations of structural and optical emission properties for ZnO structures grown on the long substrate. Defect-related green luminescence of ZnO is found to be highly dependent on the oxygen vapour in the growth region of the furnace. Our "ndings demonstrate that the green luminescence is associated with oxygen de"ciency in ZnO.

Pauc, N., Phillips, M.R., Aimez, V. & Drouin, D. 2010, 'Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101 (2010)]', Applied Physics Letters, vol. 97, p. 166102.

Ton-That, C., Foley, M., Lee Cheong Lem, L.O., McCredie, G.M., Phillips, M.R. & Cowie, B. 2010, 'Diffusion synthesis and electronic properties of Fe-doped ZnO', Materials Letters, vol. 64, no. 3, pp. 386-388.
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Fe-doped ZnO was successfully fabricated by thermal in-diffusion of Fe into ZnO crystals. X-ray absorption near edge structure (XANES), photoemission and cathodoluminescence (CL) spectroscopy have been combined to examine the Fe diffusion and its effects on the electronic and optical properties of the crystal. Depth-resolved CL demonstrates that Fe in-diffusion occurs to at least 4 Ám depth and results in intense green luminescence, whereas the undoped crystal exhibits only the ZnO near-band-edge emission. XANES and valence-band photoemission show that Fe is incorporated as Fe2+/3+ ions on substitutional Zn sites. The results suggest that the variation in the CL properties is due to a change in the oxygen vacancy charge state as a result of electron transfer from Fe.

White, R.J., Thomas, P., Phillips, M.R., Moran, K. & Wuhrer, R. 2010, 'X-Ray Mapping And Scatter Diagram Analysis Of The Discoloring Products Resulting From The Interaction Of Artist'S Pigments', Microscopy & Microanalysis, vol. 16, no. 5, pp. 594-598.
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The discoloring interaction between the artist's pigments cadmium yellow and the copper-containing malachite, an interaction that is conjectured to cause black spotting in oil paintings of the 19th and early 20th centuries, was examined using X-ray mappi

Godlewski, M., Wojcik-Glodowska, A., Guziewicz, E., Yatsunenko, S., Zakrzewski, A., Dumont, Y., Chikoidze, E. & Phillips, M.R. 2009, 'Optical properties of manganese doped wide band gap ZnS and ZnO', Optical Materials, vol. 31, pp. 1768-1771.
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Phillips, M.R., Drouin, D., Moody, S.J. & Ton-That, C. 2009, 'Imaging Fundamental Electronic Excitations at High Spatial Resolution Using Scanning Cathodoluminescence Microscopy', Microscopy & Microanalysis, vol. 15, no. S2, pp. 670-671.
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Bertinshaw, J.J., Kirkup, L., Phillips, M.R. & Placido, F. 2008, 'A system for supplying constant electrical power for postprocessing tin-doped indium oxide films', Review of Scientific Instruments, vol. 79, pp. 1-3.
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Annealing tin doped indium oxide (ITO) thin films by self-heating shows potential for reducing the crystallization temperature required to optimize the optical and electrical properties of the films. It also shows promise as a cost effective method of studying the heat treatment process in situ. A computer based solution was developed to allow for a precise control over the annealing process. To anneal at a fixed temperature, a feedback loop senses changes in the resistance of the sample and adjusts the current across the load accordingly to ensure constant delivery of power to an ITO film

Foley, M., Ton-That, C. & Phillips, M.R. 2008, 'Cathodoluminescence Inhomogeneity In ZnO Nanorods', Applied Physics Letters, vol. 93, no. 24, pp. 1-3.
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Luminescence properties of vertically aligned, crystalline ZnO nanorods are studied by cathodoluminescence (CL) spectroscopy and microscopy. Results show that luminescence characteristics vary dramatically with location on the nanorod as well as CL excitation depth. CL inhomogeneity is observed between the nanorod tip and sidewalls, accompanied by a variation in the chemical environment of surface oxygen ions as probed by photoemission spectroscopy. Our findings demonstrate that CL can provide useful information on the local optical properties of nanostructured materials, which is simply beyond the capability of other methods.

Malguth, E., Hoffmann, A.V. & Phillips, M.R. 2008, 'Fe in III-V and II-VI semiconductors', Physica Status Solidi B - Basic Research, vol. 245, no. 3, pp. 455-480.
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Malguth, E., Hoffmann, A.V. & Phillips, M.R. 2008, 'Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy', Journal of Applied Physics, vol. 104, no. 12, pp. 123712-1-123712-6.
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We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5Î1017, 1Î1018, 1Î1019, and 2Î1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal 4T1(G)+6A1(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively

Mokkapati, S., Wong-Leung, J., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M.R. 2008, 'Tuning the bandgap of InAs quantum dots by selective-area MOCVD', Journal Of Physics D-Applied Physics, vol. 41, no. 8, pp. 0-0.
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In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A sing

Morgan, S.W. & Phillips, M.R. 2008, 'High bandwidth secondary electron detection in variable pressure scanning electron microscopy using a Frisch grid', Journal Of Physics D-Applied Physics, vol. 41, no. 5, pp. 1-6.
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The bandwidth and contrast of secondary electron ( SE) images obtained using variable pressure scanning electron microscopy are enhanced when a grounded Frisch grid is placed between the SE detecting anode and the negatively biased stage. The improvement

Ton-That, C., Phillips, M.R. & Nguyen, T. 2008, 'Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles', Journal Of Luminescence, vol. 128, no. 12, pp. 2031-2034.
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Luminescence properties of nanocomposites consisting of ZnO nanoparticles in a conjugated polymer, poly [2-methoxy-5-(2?-ethyl hexyloxy)-phenylene vinylene] (MEH-PPV), were investigated. Photoluminescence measurements reveal a blue shift in the emission spectrum of MEH-PPV upon incorporation of ZnO nanoparticles into the polymer film while the emission is increasingly quenched with increasing ZnO concentration. In contrast, the structure of the polymer and its conjugation length are not affected by the presence of ZnO nanoparticles (up to 16 wt% ZnO) as revealed by Raman spectroscopy. The blue shift and photoluminescence quenching are explained by the separation of photogenerated electron+hole pairs at the MEH-PPV/ZnO interface and the charging of the nanoparticles.

Ton-That, C., Stockton, G., Phillips, M.R., Nguyen, T., Huang, C. & Cojocaru, A. 2008, 'Luminescence properties of poly- (phenylene vinylene) derivatives', Polymer International, vol. 57, no. 3, pp. 496-501.
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BACKGROUND: Conjugated polymers, especially those of the poly(phenylene vinylene) (PPV) family, are promising candidates as emission material in fight-emitting devices. The aim of this work was to investigate the dependence of the luminescence properties

Ton-That, C., Foley, M. & Phillips, M.R. 2008, 'Luminescent properties of ZnO nanowires and as-grown ensembles', Nanotechnology, vol. 19, no. 41, pp. 1-5.
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Vertically aligned ZnO nanowires were synthesized on a sapphire (11 (2) over bar0) substrate by vapour deposition and their light-emitting properties were characterized using photoluminescence and cathodoluminescence spectroscopies. Besides the nanowires, there exists a mosaic ZnO film on the substrate surface. Comparison of the luminescent properties of the as-grown ensemble and the nanowires extracted from it shows that the mosaic film is the major source of the defect-related green emission while the nanowires possess highly crystalline quality with virtually no defects. Photoemission spectroscopy shows that the valence band states associated with O 2p from the as-grown sample are diminished compared with those from the extracted nanowires. These findings suggest that the green emission partly arises from oxygen vacancies located on the surface of the mosaic film.

Ton-That, C., Phillips, M.R., Foley, M., Moody, S.J. & Stampfl, A. 2008, 'Surface electronic properties of ZnO nanoparticles', Applied Physics Letters, vol. 92, no. 26, pp. 1-3.
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The surface electronic structure of ZnO nanoparticles has been studied with photoemission and x-ray absorption spectroscopies. Contrary to expectation, ZnO:Zn phosphor nanoparticles were found to contain a lower oxygen vacancy density on the surface than undoped ZnO counterparts, but oxygen vacancies are in different chemical environments. Cathodoluminescence shows intense green luminescence from the ZnO:Zn surface, while the undoped nanoparticles exhibit only the near-band-edge emission. The results indicate the roles of surface oxygen vacancies and their environment in the previously unexplained green luminescence from the ZnO:Zn material.

Wuhrer, R., Moran, K. & Phillips, M.R. 2008, 'Multi-Detector X-Ray Mapping and Generation of Correction Factor Images for Problem Solving', Microscopy & Microanalysis, vol. 14, no. S2, pp. 1108-1109.
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X-ray mapping with Silicon Drift detectors (SDD+s) and multi-EDS detector systems has become an invaluable analysis technique because the time to perform an x-ray map is reduced considerably. Live x-ray imaging can now been performed with so much data collected in a matter of minutes. The use of multi-EDS detector systems has made this form of mapping even quicker and has also given users the ability to map minor and trace elements very accurately. How the data is collected and summed with multi-EDS detectors is very critical for accurate quantitative x-ray mapping (QXRM).

Yang, J., Li, S.S., Li, Z.W., McBean, K.E. & Phillips, M.R. 2008, 'Origin of excitonic emission suppression in an individual ZnO nanobelt', Journal Of Physical Chemistry C, vol. 112, no. 27, pp. 10095-10099.
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The near band edge emissions of an individual ZnO nanobelt were investigated by cathodoluminescence spectroscopy, which has unique advantages in higher spatial resolution, orientation, and environmental independence over the conventional photoluminescenc

Zareie, H.M., Morgan, S.W., Moghaddam, M., Maaroof, A.I., Cortie, M.B. & Phillips, M.R. 2008, 'Nanocapacitive circuit elements', ACS Nano, vol. 2, no. 8, pp. 1615-1619.
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Natural lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The nanocapacit

Godlewski, M., Skrobot, M., Guziewicz, E. & Phillips, M.R. 2007, 'Color tuning of white light emission from thin films of ZnSe', Journal Of Luminescence, vol. 125, no. 1-2, pp. 85-91.
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In this paper we discuss light emission from thin films of ZnSe obtained by atomic layer deposition (ALD). Due to the color mixing of band edge and two deep defect-related emissions of ZnSe, the ALD films emit white light. Tuning of color temperature is demonstrated in cathodoluminescence experiments. We report that chromaticity parameters can be varied by a change of accelerating voltage or excitation density.

Godlewski, M., Yatsunenko, S., Ivanov, V., Drozdowicz-Tomasia, K., Goldys, E.M., Phillips, M.R., Klar, P.J. & Heimbrodt, W. 2007, 'Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese', Low Temperature Physics, vol. 33, no. 2-3, pp. 192-196.
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Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes. For Mn2+ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly, it has been reported that in nanostructures of ZnMnS the 4T1 to 6A1 intra-shell transition of Mn2+ results in a bright photoluminescence characterized by a short PL decay time. The model of a quantum confined atom was introduced to explain the observed experimental results. It was later claimed that this model is incorrect. Based on the results of our photoluminescence, photoluminescence kinetics, time-resolved photoluminescence, electron spin resonance, and optically detected magnetic resonance investigations, we confirm photoluminescence enhancement and decrease of photoluminescence lifetime and relate these effects to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. This mechanism is active in both bulk and in low-dimensional structures, but is significantly enhanced in nanostructure samples

Motlan, M., Zhu, G., Gh, D., McBean, K.E., Phillips, M.R. & Goldys, E.M. 2007, 'Annealing Of ZnS Nanocrystals Grown By Colloidal Synthesis', Optical Materials, vol. 29, no. 12, pp. 1579-1583.
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ZnS nanocrystals (NCs) capped with tetramethylammonium (TMAH) were synthesized from ZnCl2 . 2H(2)O and thiourea using a wet chemical process. Further treatments of the nanocrystals such as aging, and annealing have been conducted to examine the stability

Toth, M., Knowles, W.R. & Phillips, M.R. 2007, 'Imaging Deep Trap Distributions By Low Vacuum Scanning Electron Microscopy', Applied Physics Letters, vol. 90, no. 7, pp. 0-0.
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The distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented f

Toth, M., Lobo, C., Knowles, W.R., Phillips, M.R., Postek, M. & Vladar, A. 2007, 'Nanostructure fabrication by ultra-high-resolution environmental scanning electron microscopy', Nano Letters, vol. 7, no. 2, pp. 525-530.
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Electron beam induced deposition (EBID) is a maskless nanofabrication technique capable of surpassing the resolution limits of resist-based lithography. However, EBID fabrication of functional nanostructures is limited by beam spread in bulk substrates, substrate charging and delocalised film growth around deposits. Here, we overcome these problems by using environmental scanning electron microscopy (ESEM) to perform EBID and etching while eliminating charging artifacts at the nanoscale. Nanstructure morphology is taolored by slimming of deposits by ESEM imaging i the presence of a gaseous etch precursor and by pre-etching small features into a deposit (using a stationary or scanned electronic beam) prior to a final imaging process. The utility of this process is demonstrated by slimming of nanowires deposited by EBID, by the fabrication of gaps (between 4 and 7 nm wide) in the wires and by the removal of thin films surrounding such nanowires. ESEM imaging provides a direct view of the slimming process, yielding process resolution that is limited by ESEM image resolution (~1 nm) and surface roughening ocurring during etching.

Veal, T.D., Piper, L.F., Phillips, M.R., Zareie, H.M., Lu, H., Schaff, W.J. & Mcconville, C.F. 2007, 'Doping-dependence of subband energies in quantized electron accumulation at InN surfaces', Physica Status Solidi A-Applications And Materials Science, vol. 204, no. 2, pp. 536-542.
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Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN-oxide-tip junctions recorded in air at room temperature exhibit a simi

White, R.E., Thomas, P., Phillips, M.R., Wuhrer, R. & Guerbois, J.L. 2007, 'Tg-ms Characterization Of The Reaction Products Of Cadmium Yellow And Malachite Artist's Pigments', Journal Of Thermal Analysis And Calorimetry, vol. 88, no. 1, pp. 181-184.
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The deleterious interaction of some traditional sulphide artists pigments and copper ions results in the formation of black copper sulphides, in particular, covellite (CuS), and, hence, the discolouration of valuable artworks. In this paper the interacti

Chen, P., Butcher, K.S., Wintrebert-Fouquet, M., Wuhrer, R., Phillips, M.R., Prince, K., Timmers, H., Shrestha, S.K. & Usher, B.F. 2006, 'Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD', Journal Of Crystal Growth, vol. 288, no. 2, pp. 241-246.
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The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-g

Coleman, V.A., Buda, M., Tan, H.H., Jagadish, C., Phillips, M.R., Koike, K., Sasa, S., Inoue, M. & Yano, M. 2006, 'Observation of blue shifts in ZnOZnMgO multiple quantum well structures by ion-implantation induced intermixing', Semiconductor Science And Technology, vol. 21, no. 3, pp. 25-28.
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Implantation with low-energy (80 keV) oxygen ions and subsequent rapid thermal annealing at 800 degrees C are used to induce intermixing in a stack of 19 ZnO/Zn0.7Mg0.3O multiple quantum wells grown oil sapphire by molecular beam epitaxy. Large blue shif

Coleman, V., Bradby, J., Jagadish, C. & Phillips, M.R. 2006, 'Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO', Applied Physics Letters, vol. 89, no. 8, pp. 1-3.
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The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and de

Godlewski, M., Phillips, M.R., Kazlauskas, K., Czernecki, R., Targowski, G., Perlin, P., Leszczynski, M., Figge, S. & Hommel, D. 2006, 'Profiling of light emission of GaN-based laser diodes with cathodoluminescence', Physica Status Solidi A-Applications And Materials Science, vol. 203, no. 7, pp. 1811-1814.
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Cathodoluminescence is applied for eveluation of in-plane variations of light emission from gaN-based laser diode structures. We demonstrate that potential fluctuations affect significantly emission of laser diodes for e-beam currents above thresholds for a stimulated emission.

Malguth, E., Hoffmann, A.V., Gehlhoff, W., Gelhausen, O., Phillips, M.R. & Xu, X. 2006, 'Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments', Physical Review B, vol. 74, no. 16, p. 165202.
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This work provides a consistent picture of the structural, optical, and electronic properties of Fe-doped GaN. A set of high-quality GaN crystals doped with Fe at concentrations ranging from 5x10(17) cm(-3) to 2x10(20) cm(-3) is systematically investigat

McBean, K.E., Phillips, M.R. & Goldys, E.M. 2006, 'Synthesis and characterization of doped and undoped ZnO nanostructures', Microscopy And Microanalysis, vol. 12, no. 4, pp. 327-330.
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Zinc oxide (ZnO) nanoparticles have been produced using precipitation methods from ethanolic solution. Rare-earth metal doping was performed, and the effect of lithium codoping on the luminescence properties of the rare-earth doped products was assessed.

Morgan, S.W. & Phillips, M.R. 2006, 'Gaseous scintillation detection and amplification in variable pressure scanning electron microscopy', Journal Of Applied Physics, vol. 100, no. 7, pp. 1-16.
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This work investigates the generation and detection of gaseous scintillation signals produced in variable pressure scanning electron microscopy through electron-gas molecule excitation reactions. Here a gaseous scintillation detection (GSD) system is dev

Morgan, S.W. & Phillips, M.R. 2006, 'Transient analysis of gaseous electron-ion recombination in the environmental scanning electron microscope', Journal Of Microscopy-Oxford, vol. 221, pp. 183-202.
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Most of the work carried out in relation to contrast mechanisms and signal formation in an environmental scanning electron microscope has yet to consider the time dependent aspects of image generation at a quantitative level. This paper quantitatively de

Pauc, N., Phillips, M.R., Aimez, V. & Drouin, D. 2006, 'Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence', Superlattices and Microstructures, vol. 40, no. 4-6, pp. 557-561.
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We present a low temperature study of GaN eiplayers by means of low voltage cathodoluminescence (CL). We show that lowering the primary electrons accelerating voltage down to 1 kV allows imaging of single threading dislocations. By using monochromatic or panchromatic low voltage CL microscopy, it is possible to extract different diffusion lengths related to free excitons, bound excitons or donot-to-acceptor pair transitions.

Pauc, N., Phillips, M.R., Aimez, V. & Drouin, D. 2006, 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence', Applied Physics Letters, vol. 89, no. 16, pp. 161905-1-161905-3.
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The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62¦28 nm was found for GaN:Si (~3Î1018 cm+3) compared with 81¦20 nm for a nominally undoped n-type GaN (~1Î1016 cm+3)

Phillips, M.R. 2006, 'Cathodoluminescence microscopy and spectroscopy of opto-electronic materials', Microchimica Acta, vol. 155, no. 1-2, pp. 51-58.
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Cathodoluminescence (CL) microscopy and spectroscopy are enabling techniques for the microcharacterisation of technologically important materials. Recent advances in SEM instrumentation have considerably expanded the microanalytical capabilities of the C

Phillips, M.R. & Drouin, D. 2006, 'Comparison of Low Voltage Cathodoluminescent Phosphors', Microscopy & Microanalysis, vol. 12, no. S2, pp. 1526-1527.
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NA

Phillips, M.R., Drouin, D. & Goldys, E.M. 2006, 'Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage Cathodoluminescence', Microscopy & Microanalysis, vol. 12, no. S2, pp. 156-157.
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NA

Veal, T.D., Piper, L.F., Phillips, M.R., Zareie, H.M., Lu, H., Schaff, W.J. & Mcconville, C.F. 2006, 'Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1-xN surfaces', Physica Status Solidi A-Applications And Materials Science, vol. 203, no. 1, pp. 85-92.
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Electron tunnelling spectroscopy has been used to investigate quantized levels in electron accumulation layers at InGaN surfaces. The tunnelling spectra exhibit a plateau in the normalized conductance which widens with increasing Ga-content, correspondin

White, R.E., Phillips, M.R., Thomas, P. & Wuhrer, R. 2006, 'In-situ investigation of discolouration processes between historic oil paint pigments', Microchimica Acta, vol. 155, no. 1-2, pp. 319-322.
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Discolouring interactions between paint pigments have been observed since the mid 19(th) century. The source of some of these discolourations is the production of copper sulfides from an interaction between cadmium sulfide pigments and copper containing

Zareie, H.M., McDonagh, A.M., Edgar, J.A., Ford, M.J., Cortie, M.B. & Phillips, M.R. 2006, 'Controlled assembly of 1,4-phenylenedimethanethiol molecular nanostructures', Chemistry Of Materials, vol. 18, no. 9, pp. 2376-2380.
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We present here the first high-resolution scanning tunneling microscope images showing that 1,4phenylenedimethanethiol forms mono- and multilayers on gold(1 11) substrates under particular solution-deposition conditions. The high-resolution images show t

Zhang, H., Phillips, M.R., Fitzgerald, J.D., Yu, J.X. & Chen, Y. 2006, 'Patterned growth and cathodoluminescence of conical boron nitride nanorods', Applied Physics Letters, vol. 88, no. 9, pp. 1-3.
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We demonstrate a simple and effective approach for growing large-scale, high-density, and well-patterned conical boron nitride nanorods. A catalyst layer of Fe(NO3)(3) was patterned on a silicon substrate by using a copper grid as a mask. The nanorods we

Drozdowicz-Tomsia, K., Goldys, E.M., Motlan, M., Zareie, H.M. & Phillips, M.R. 2005, 'Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures', Applied Physics Letters, vol. 86, no. 17, pp. 1-3.
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Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescenc

Godlewski, M., Yatsunenko, S., Drozdowicz-Tomsia, K., Goldys, E.M., Phillips, M.R., Klar, P.J. & Heimbrodt, W. 2005, 'Dynamics of light emission in CdMnS nanoparticles', ACTA Physica Polonica, vol. 108, no. 4, pp. 681-688.
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We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn¦^(+) intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn¦^(+) intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn¦^(+) ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.

Godlewski, M., Ivanov, V., Lusakowska, E., Bozek, R., Miasojedovas, S., Jursenas, S., Kazlauskas, K., Zukauskas, A., Goldys, E.M., Phillips, M.R., Bottcher, T., Figge, S. & Hommel, D. 2005, 'Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures', Physica Status Solidi C, vol. 2, no. 3, pp. 1056-1059.
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Effects of n-type doping of GaN epilayers and InGaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

Godlewski, M., Phillips, M.R., Czernecki, R., Targowski, G., Perlin, P., Leszczynski, M., Figge, S. & Hommel, D. 2005, 'Light emission properties of GaN-based laser diode structures', ACTA Physica Polonica, vol. 108, no. 4, pp. 675-680.
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Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.

Godlewski, M., Yatsunenko, S., Ivanov, V., Khachapuridze, A., Swiatek, K., Goldys, E.M., Phillips, M.R., Klar, P.J. & Heimbrodt, W. 2005, 'Origin of ultrafast component of photoluminescence decay in nanostructures dopes with transition metal or rare-earth ions', ACTA Physica Polonica, vol. 107, no. 1, pp. 65-74.
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NA

Mokkapati, S., Lever, P., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M.R. 2005, 'Controlling the properties of InGaAs quantum dots by selective-area epitaxy', Applied Physics Letters, vol. 86, no. 11, pp. 1-3.
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Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of

Scott, K., Butcher, K.S., Wintrebert-Fouquet, M., Chen, P.P., Prince, C., Timmers, H., Shrestha, S.K., Shubina, T.V., Ivanov, S.V., Wuhrer, R., Phillips, M.R. & Monemar, B. 2005, 'Non-stoichiometry and non-homogeneity in InN', Physica Status Solidi C, vol. 2, no. 7, pp. 2263-2266.
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It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. inN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0eV that is not due to the Moss-Burstein effetc, oxygen inclusion or quantumn size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogeneity and non-stoichiometry appear to be general rpoblems for inN growth. Excess nitrogen can be present at very high levels and indium rich materials is also found. This work shwos that the extent of the Moss-Burstein effects will have to be reassessed for InN.

Scott, K., Butcher, A., Wintrebert-Fouquet, M., Chen, P.P., Wuhrer, R. & Phillips, M.R. 2005, 'Revisiting electrochromism in InN', Physica Status Solidi C, vol. 2, no. 7, pp. 2293-2296.
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We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water ebetrolysis is evident. Electrical properties of the films were also affected. It is suggested fhat the change in the film resistivity results from hydrogen incorporation or removal during the electrolysis (dependent on sample polarity). The presence of grain boundaries is believed to enhance the penetration of chemical species into the InN resulting in a greater net change in the observed properties.

Tomaszewska-Grzeda, A., Lojkowski, W., Godlewski, M., Yatsunenko, S., Drozdowicz-Tomsia, K., Goldys, E.M. & Phillips, M.R. 2005, 'Growth and characterisation of ZnO nanoparticles', ACTA Physica Polonica, vol. 108, no. 5, pp. 897-902.
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In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studies with cathodoluminescence and microphotoluminescence. Even at the room temperature excitonic emission is well resolved, due to high exciton binding energy of ZnO. Decay kinetics of photoluminescence emisssions and efficiency of inter-nanoparticles energy migration is evaluated from maps of in-plane variations of photoluminescence decay times measured in microphotoluminescence setup

White, R.E., Thomas, P., Phillips, M.R. & Wuhrer, R. 2005, 'A DSC study of the effect of lead pigments on the drying of cold pressed linseed oil', Journal Of Thermal Analysis And Calorimetry, vol. 80, no. 1, pp. 237-239.
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Cold pressed linseed oil and paints prepared using the inorganic pigments; lead white and red lead, were characterised using non-isothermal differential scanning calorimetry (DSC) in an air atmosphere to determine the effect of the pigment on the oxidati

Wojcik, A., Kopalko, K., Godlewski, M., Lusakowska, E., Guziewicz, E., Minikayev, R., Paszkowicz, W., Swiatek, K., Klepka, M., Jakiela, R., Kiecana, M., Sawicki, M., Dybko, K. & Phillips, M.R. 2005, 'Thin films of ZnO and ZnMnO by atomic layer epitaxy', Optica Applicata, vol. 35, no. 3, pp. 413-417.
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We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.

Gelhausen, O., Phillips, M.R., Goldys, E.M., Paskova, T., Monemar, B., Strassburg, M. & Hoffmann, A.V. 2004, 'Dissociation of H-related defect complexes in Mg-doped GaN', Physical Review B, vol. 69, no. 12, pp. 1-9.
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Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately Mg-doped (p-type) GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped (n-type) GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg and that the donor (20+30 meV) is hydrogen-related, possibly a (VN-H) complex. This complex is dissociated either by electron irradiation or thermal annealing in N2 or O2 atmosphere. We found that upon electron irradiation, a deeper emission line (centered at 3.14 eV) emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor (100+200 meV) with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at 350¦30 and 440¦40 meV were identified as being responsible for the blue band (2.8+3.0 eV) in heavily Mg-doped GaN. The donor level at 350¦30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

Gelhausen, O., Malguth, E., Phillips, M.R., Goldys, E.M., Strassburg, M., Hoffmann, A.V., Graf, T., Gjukic, M. & Stutzmann, M. 2004, 'Doping-level dependent optical properties of GaN:Mn', Applied Physics Letters, vol. 84, no. 22, pp. 4514-4516.
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The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5+23Î1019 cm+3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at 1.414¦0.002 eV, which was attributed to an internal 5T2-->5E transition of the neutral Mn3+ state. The intensity of this Mn-related transmission peak was found to scale with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 1020 cm+3 reduced the near band edge emission intensity by around one order of magnitude. A complete quenching of the donor+acceptor-pair band at 3.27 eV and strong decrease of the yellow luminescence centered at 2.2 eV were attributed to a reduced concentration of VGa. In the infrared spectral range of 0.8+1.4 eV three broad, Mn-doping related CL emission bands centered at 1.01¦0.02, 1.09¦0.02, and 1.25¦0.03 eV were observed. Their origin is attributed to deep donor complexes, which are generated as a result of the heavy Mn-doping.

Godlewski, M., Lusakowska, E., Bozek, R., Goldys, E.M., Phillips, M.R., Bottcher, T., Figge, S. & Hommel, D. 2004, 'Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers', Physica Status Solidi A-Applied Research, vol. 201, pp. 212-215.
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Godlewski, M., Lusakowska, E., Goldys, E.M., Phillips, M.R., Bottcher, T., Figge, S., Hommel, D., Leszczynski, M., Grzegory, I. & Porowski, S. 2004, 'Diffusion length of carriers and excitons in GaN - influence of epilayer microstructure', Applied Surface Science, vol. 223, pp. 294-302.
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We demonstrate a correlation between the microsturcture of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homeopitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving strutucal quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.

Godlewski, M., Goldys, E.M., Phillips, M.R., B÷ttcher, T., Figge, S., Hommel, D., Czernecki, R., Prystawko, P., Leszczynski, M., Perlin, P., Grzegory, I. & Porowski, S. 2004, 'In-depth and in-plane profiling of light emission properties of InGaN-based laser diode', Physica Status Solidi A-Applied Research, vol. 201, pp. 207-211.
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Godlewski, M., Szmidt, J., Olszyna, A., Werbowy, A., Lusakowska, E., Phillips, M.R., Goldys, E.M. & Sokolowska, A. 2004, 'Luminescent properties of wide bandgap materials at room temperature', Physica Status Solidi C, vol. 1, no. 2, pp. 213-218.
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Properties of nanocrystalline thin films of selected nitrides are discussed as possible biffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

Godlewski, M., Yatsunenko, S., Khachapuridze, A., Ivanov, V., Golacki, Z., Karczewski, G., Bergman, P.J., Klar, P.J., Heimbrodt, W. & Phillips, M.R. 2004, 'Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds', Journal of Alloys and Compounds, vol. 380, pp. 45-49.
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Guziewicz, E., Godlewski, M., Kopalko, K., Lusakowska, E., Dynowska, E., Guziewicz, M., Godlewski, M.M. & Phillips, M.R. 2004, 'Atomic layer deposition of thin films of ZnSe - structural and optical characterization', Thin Solid Films, vol. 446, no. 2, pp. 172-177.
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Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue `edge+ emission accompanied by donor+acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays.

Kopalko, K., Godlewski, M., Guziewicz, E., Lusakowska, E., Paszkowicz, W., Domagala, J.Z., Dynowska, E., Szczerbakow, A., Wojcik, A. & Phillips, M.R. 2004, 'Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy', Vacuum, vol. 74, pp. 269-272.
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We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed witha tomic force microscopy, scanning electron microscopy, cathodoluminescence and photoluminescence.

Kopalko, K., Godlewski, M., Lusakowska, E., Paskowicz, W., Domagala, J.Z., Szczerbakow, A., Ivanov, V., Godlewski, M.M. & Phillips, M.R. 2004, 'Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterisation', Physica Status Solidi C, vol. 1, no. 4, pp. 892-895.
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We report successful growth of thin films ZnO by atomic layer epitaxy (ALE). Properties of the ZnO films grown by ALE on GaN/sapphire are described in relation to those grown by the same sequential procedure on uncoated sapphire and glass substrates.

Phillips, M.R., Gelhausen, O. & Goldys, E.M. 2004, 'Cathodoluminescence properties of zinc oxide nanoparticles', Physica Status Solidi A-Applied Research, vol. 201, pp. 229-234.
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Phillips, M.R., Zareie, H.M., Gelhausen, O., Drago, M., Schmidtling, T. & Richter, W. 2004, 'Scanning tunnelling and cathodoluminescence spectroscopy of indium nitride', Journal of Crystal Growth, vol. 269, no. 1, pp. 106-110.
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ndium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL) spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak centered at 0.8 eV was observed at 80 K. This peak was attributed to an excitonic radiative recombination mechanism as its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m=2. A large spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as non-radiative recombination centers. A surface band gap of not, vert, similar1.4 eV was estimated from STS I+V curves.

Strassburg, M., Rodina, A., Dworzak, M., Haboeck, U., Krestnikov, I.L., Hoffmann, A.V., Gelhausen, O., Phillips, M.R., Alves, H.R., Zeuner, A., Hofmann, D.M. & Meyer, B.K. 2004, 'Identification of bound exciton complexes in ZnO', Physica Status Solidi B-Basic Research, vol. 241, no. 3, pp. 607-611.
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An identification of shallow bound exciton centers in ZnO is presented based on magneto-optical measurements and diffusion experiments. The thermalization behavior of the Zeeman split components confirms that the I4, I6, I8 and I9 exciton lines stem from donor bound exciton complexes. The results are supported by theoretical analysis of shallow bound exciton complexes revealing the 7 symmetry of the upper valence band. The presence of two-electron satellites related to the respective transitions is further evidence for the donor bound complexes and enabled the determination of donor binding energies. Hydrogen, aluminum, gallium and indium were identified to origin the I4, I6, I8 and I9 lines by doping, diffusion and annealing experiments combined with photoluminescence and secondary ion mass spectrometry.

Dredge, P., Wuhrer, R. & Phillips, M.R. 2003, 'Monet's painting under the microscope', Microscopy And Microanalysis, vol. 9, no. 2, pp. 139-143.
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An oil painting by Claude Monet, Port-Goulphar, Belle-Ile 1887 (collection of the Art Gallery of New South Wales), was examined to determine both the identity of the pigments used by the artist in this painting and his technique of mixing colors and laying paint on the canvas. The extremely complex construction of the painting was revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), and X-ray mapping (XRM) analysis of cross sections of paint flakes excised from damaged regions of Port-Goulphar, Belle-Ile. Nine different pigments were found on the painting. Many of the identified colors were modern pigments that became available only late in the 19th century as a result of scientific advances in pigment chemistry. Although similar colors were available in a natural mineral form, they lacked the vivid color of their manufactured counterparts. The use of these new synthetic metallic oxide colors by Monet accounts for the brilliance of his paintings. In addition, a separation between successive paint layers was observed in some areas of paint chip cross sections, indicating that oil-based paint was applied to paint that had dried, and consequently, Port-Goulphar, Belle-Ile was painted over a long period of time. This observation is contrary to the general perception of Monet's technique of painting freely and quickly.

Gelhausen, O., Phillips, M.R. & Goldys, E.M. 2003, 'A method to improve the light emission efficiency of Mg-doped GaN', Journal of Physics D: Applied Physics, vol. 36, no. 23, pp. 2976-2979.
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Scanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal+organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-purity gaseous atmospheres (N2, O2 and H2(5%)/N2) and low-energy electron beam irradiation (LEEBI), have been investigated. Post-growth annealing in a H2/N2 atmosphere followed by LEEBI leads to a significant enhancement of the free electron-to-bound Mg-acceptor (e, Mg) CL emission and a reduction of nonradiative centres involving native defects. The presented results demonstrate that the combination of post-growth annealing in a H2/N2 atmosphere and LEEBI dissociation of Mg+H complex acceptors significantly improves the light emitting efficiency of Mg-doped p-type GaN. Conversely, the samples annealed in a N2 or O2 atmosphere exhibit a reduced (e, Mg) emission after both annealing and LEEBI treatment.

Gelhausen, O., Klein, H., Phillips, M.R. & Goldys, E.M. 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Physica Status Solidi B-basic Research, vol. 239, no. 2, pp. 310-315.
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In-plane- and depth-resolved cathodoluminescence (CL) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and residual impurities in rapidly thermally annealed (RTA) Mg-doped p-type GaN. During intense electron beam irradiation (e.g. Eb = 10 keV, Ib = 80 nA), an electric field is generated within the primary beam interaction volume. We observed the following two electric field-related effects: (i) an increased electron recombination length and a subsequent field-assisted charge spreading, which causes a dissociation of Mg-H complexes beyond the interaction volume of the primary electron beam, and ii) thermally assisted electro-migration of positively charged, mobile defects leading to the formation of deeper complexes, which are highly stable and act as nonradiative recombination pathways. Furthermore, the diffusion of electron beam-dissociated hydrogen was found to result in the passivation of Mg acceptors beyond the charge recombination volume.

Gelhausen, O., Klein, H., Phillips, M.R. & Goldys, E.M. 2003, 'Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN', Applied Physics Letters, vol. 83, no. 16, pp. 3293-3295.
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The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following the LEEBI treatment, the ubiquitous shallow donor+acceptor-pair emission at 3.27 eV decreased, while a deeper DAP emission at ~3.1 eV dramatically increased in intensity, and a broad yellow luminescence band centered at 2.2 eV evolved. The results clearly indicate that the centers involved in the 3.27 eV transition are not stable during irradiation by low-energy electrons. Further, we report that the LEEBI-treatment not only dissociates neutral Mg-H complexes as intended, but simultaneously dissociates other hydrogenated defect complexes, giving rise to additional radiative recombination channels.

Godlewski, M.M., Ivanov, V., Goldys, E.M., Phillips, M.R., B÷ttcher, T., Figge, S., Hommel, D., Czernecki, R., Prystawko, P., Leszczynski, M., Perlin, P., Grzegory, I. & Porowski, S. 2003, 'Cathodoluminescence profiling of InGaN-based quantum well sturctures and laser diodes - in-plane instabilities of light emission', ACTA Physica Polonica, vol. 103, no. 6, pp. 689-694.
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Godlewski, M., Guziewicz, E., Kopalko, K., Lusakowska, E., Dynowska, E., Godlewski, M.M., Goldys, E.M. & Phillips, M.R. 2003, 'Origin of white color light emission in ALE-grown ZnSe', Journal Of Luminescence, vol. 102-103, no. 1, pp. 455-459.
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We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (1 0 0). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage.

Phillips, M.R., Telg, H., Kucheyev, S.O., Gelhausen, O. & Toth, M. 2003, 'Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride', Microscopy And Microanalysis, vol. 9, no. 2, pp. 144-151.
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Cathodoluminescence (CL) spectra from silicon doped and undoped wurtzite n-type GaN have been measured in a SEM under a wide range of electron beam excitation conditions, which include accelerating voltage, beam current, magnification, beam diameter, and specimen temperature. The CL intensity dependence on excitation density was analyzed using a power-law model (ICL [is proportional to] Jm) for each of the observed CL bands in this material. The yellow luminescence band present in both silicon and undoped GaN exhibits a close to cube root (m = 0.33) dependence on electron beam excitation at both 77 K and 300 K. However, the blue (at 300 K) and donor-acceptor pair (at 77 K) emission peaks observed in undoped GaN follow power laws with exponents of m = 1 and m = 0.5, respectively. As expected from its excitonic character, the near band edge emission intensity depends linearly (m = 1) in silicon doped GaN and superlinearly (m = 1.2) in undoped GaN on the electron beam current. Results show that the intensities of the CL bands are highly dependent not only on the defect concentration but also on the electron-hole pair density and injection rate. Furthermore, the size of the focussed electron beam was found to have a considerable effect on the relative intensities of the CL emission peaks. Hence SEM parameters such as the objective lens aperture size, astigmatism, and the condenser lens setting must also be considered when assessing CL data based on intensity measurements from this material.

Yatsunenko, S., Khachapuridze, A., Ivanov, V., Godlewski, M.M., Khoi, L., Golacki, Z., Karczewski, G., Goldys, E.M., Phillips, M.R., Klar, P.J. & Heimbrodt, W. 2003, 'Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - mechanism of lifetime reduction', ACTA Physica Polonica, vol. 103, no. 6, pp. 643-648.
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Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn2+ emission to spin dependent magnetic interactions between localized spins of Mn2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.

Bradby, J.E., Kucheyev, S.O., Williams, J.S., Wong-Leung, J., Swain, V., Munroe, P., Li, G. & Phillips, M.R. 2002, 'Indentation-induced damage in GaN epilayers', Applied Physics Letters, vol. 80, pp. 383-385.

Bradby, J., Kucheyev, S.O., Williams, J.S., Jagadish, C., Swain, M.V., Munroe, P. & Phillips, M.R. 2002, 'Contact-induced defect propagation in ZnO', Applied Physics Letters, vol. 80, no. 24, pp. 4537-4539.
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Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an ~4.2 Ám radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects. Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices.

Bradby, J., Kucheyev, S.O., Williams, J.S., Wong-Leung, J., Swain, M.V., Munroe, P., Li, G. & Phillips, M.R. 2002, 'Indentation-induced damage in GaN epilayers', Applied Physics Letters, vol. 80, no. 3, pp. 383-385.
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The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence (CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable "footprint" of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during loading when the maximum load is above the elastic-plastic threshold, and such a behavior can be correlated with multiple slip bands revealed by XTEM. No evidence of pressure-induced phase transformations is found from within the mechanically damaged regions using selected-area diffraction patterns. The main deformation mechanism appears to be the nucleation of slip on the basal planes, with dislocations being nucleated on additional planes on further loading. XTEM reveals no cracking or delamination in any of the samples studied for loads of up to 250 mN.

Gauvin, R., Griffin, B.J., Nockolds, C., Phillips, M.R. & Joy, D.C. 2002, 'A method to measure the effective gas path length in the environmental or variable pressure scanning electron microscope', Scanning, vol. 24, no. 4, pp. 171-174.
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A simple method is described to determine the effective gas path length when incident electrons scatter in the gas above the specimen. This method is based on the measurement of a characteristic x-ray line emitted from a region close to the incident beam. From various experimental measurements performed on various microscopes, it is shown that the efefctive gas path length may increase with the chamber pressure and that it is also often dependent on the type of x-ray bullet.

Gelhausen, O., Klein, H., Phillips, M.R. & Goldys, E.M. 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped gaN', Applied Physics Letters, vol. 81, no. 20, pp. 3747-3749.
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The effect of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and native defects in activated metalorganic vapor phase epitaxy-grown Mg-doped (p-type) GaN layers was studied by cathodoluminescence (CL) microanalysis and spectroscopy at temperatures between 80 and 300 K. The LEEBI treatment dissociates (Mg+H)0 complexes producing (i) at 300 K, a significant increase in a free-to-bound transition (e,Mg0) centered at 3.26 eV and (ii) at 80 K, a substantial decrease in a H+Mg donor+acceptor pair emission at 3.27 eV. In-plane and depth-resolved CL imaging reveals a direct correlation between the spatial distribution of the injected carriers and the depth and lateral distribution of activated Mg acceptors. This finding strongly suggests that hydrogen dissociation results from electron-hole recombination at hydrogen defect complexes rather than heating by the electron beam. The results at 80 K indicate that the process of dissociation of hydrogen from (Mg+H)0 complexes is accompanied by a generation of additional defect centers. It is proposed that following LEEBI hydrogen does not leave the specimen, but instead associates with nitrogen vacancies, generating additional recombination channels

Godlewski, M., Goldys, E.M., Phillips, M.R., Bottcher, T., Figge, S., Hommel, D., Czernecki, R., Prystawko, P., Leszczynski, M., Perlin, P., Wisniewski, P., Suski, T., Bockowski, M., Grzegory, I. & Porowski, S. 2002, 'Relationship between sample morphology and carrier diffusion length in GaN thin films.', Acta Physica Polonica A, vol. 102, no. 4-5, pp. 627-630.
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Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

Kucheyev, S.O., Toth, M., Phillips, M.R., Williams, J.S., Jagadish, C. & Li, G. 2002, 'Chemical origin of the yellow luminescence in GaN', Journal of Applied Physics, vol. 91, no. 9, pp. 5867-5874.
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The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed

Kucheyev, S.O., Toth, M., Phillips, M.R., Williams, J.S., Jagadish, C. & Li, G. 2002, 'X-ray spectometry investigation of electrical isolation in GaN', Journal of Applied Physics, vol. 91, no. 6, pp. 3940-3942.
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Electrical isolation of n-type GaN epilayers bombarded with MeV light ions is studied by energy dispersive x-ray spectrometry (EDS). We show that the maximum bremsstrahlung x-ray energy (the Duane-Hunt limit) can be used to monitor the isolation process in GaN. This method allows the dose region above the threshold dose for isolation to be conveniently studied, whereas the application of conventional (low-voltage) electrical techniques in this dose range with large sheet resistances of the material (>~1011 ?/sq) is often impossible due to comparable parasitic resistances of the experimental setup. A correlation of EDS and resistance measurements of GaN strongly suggests that the magnitude of sample charging scales with the number of ion-beam-produced deep electron traps which are empty at equilibrium. The results presented demonstrate the utility of EDS as a powerful and simple technique to study electrical isolation in wide band-gap semiconductors.

Remond, G., Myklebust, R.L., Fialin, M., Nockolds, C., Phillips, M.R. & Roques-Carmes, C. 2002, 'Decomposition of wavelength dispersive X-ray spectra', Journal of Research of the national Institute of Standards and technology, vol. 107, no. 6, pp. 509-529.
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Remond, G., Nockolds, C., Phillips, M.R. & Roques-Carmes, C. 2002, 'Implications of polishing techniques in quantitative X-ray microanalysis', Journal of Research of the national Institute of Standards and technology, vol. 107, no. 6, pp. 639-662.
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Toth, M., Phillips, M.R., Craven, J.P., Thiel, B.L. & Donald, A.M. 2002, 'Electric fields produced by electron irradiation of insulators in a low vacuum environment', Journal of Applied Physics, vol. 91, no. 7, pp. 4492-4499.
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We report on the properties of electric fields generated as a result of electron irradiation of dielectrics in a low vacuum scanning electron microscope. Individual field components produced by (i) ionized gas molecules located outside the sample surface and (ii) subsurface trapped charge were detected by measurements of changes in (i) primary electron landing energy and (ii) secondary electron (SE) emission current, respectively. The results provide experimental evidence for a recently proposed model of field-enhanced SE emission from electron irradiated insulators in a low vacuum environment [Toth et al., J. Appl. Phys. 91, 4479 (2002)]. Errors introduced into x-ray microanalysis by the electric fields generated by ionized gas molecules can be alleviated by minimizing the steady state ion concentration by the provision of efficient ion neutralization routes. It is demonstrated how this can be achieved using simple sample-electrode geometries.

Toth, M., Phillips, M.R., Thiel, B.L. & Donald, A.M. 2002, 'Electron imaging of dielectrics under simultaneous electron-ion irradiation', Journal of Applied Physics, vol. 91, no. 7, pp. 4479-4491.
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We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a defocused flux of soft-landing positive ions, secondary electron (SE) images can contain contrast due to lateral variations in (i) changes in the SE yield caused by subsurface trapped charge and (ii) the SE-ion recombination rate. Both contrast mechanisms can provide information on microscopic variations in dielectric properties. We present a model of SE contrast formation that accounts for localized charging and the effects of gas ions on the SE emission process, emitted electrons above the sample surface, and subsurface trapped charge. The model explains the ion flux dependence of charge-induced SE contrast, an increase in the sensitivity to surface contrast observed in SE images of charged dielectrics, and yields procedures for identification of contrast produced by localized sample charging.

Chen, W.M., Buyanova, I., Goldys, E.M., Phillips, M.R., Xin, H.P., Tu, C.W., Buyanova, I., Chen, W.M., Goldys, E.M., Phillips, M.R., Xin, H.P. & Tu, C.W. 2001, 'Strain Relation in GaNxP1-x Alloy: Effect on Optical Properties', Physica B: Condensed Matter, vol. 308-310, pp. 106-109.
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Cooper, R., Smith, K., Colella, M., Vance, E.R. & Phillips, M.R. 2001, 'Optical Emission Due to Ionic Displacement in Alkaline Earth Titanates', Journal of Nuclear Materials, vol. 289, pp. 199-203.
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Danilatos, G., Phillips, M.R. & Nailon, J.V. 2001, 'Electron Beam Current Loss at the High Vacuum High Pressure Boundary in the Environmental Scanning Electron Microscope', Microscopy & Microanalysis, vol. 7, no. 5, pp. 397-406.
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Gelhausen, O., Phillips, M.R. & Toth, M. 2001, 'Depth-Resolved Cathodoluminescence Microanalysis of Near-Edge Emission in Ill-Nitride Thin Films', Journal of Applied Physics, vol. 89, no. 6, pp. 3535-3537.
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Godlewski, M., Goldys, E.M., Phillips, M.R., Pakula, K. & Baranowski, J. 2001, 'Cathodoluminescence and Depth-Profiling Cathodoluminescence Studies of Interface properties in MOCVD-Grown InGaN/GaN/Sapphire Structures: Role of GaN Buffer Layer', Applied Surface Science, vol. 177, pp. 22-31.
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Godlewski, M., Goldys, E.M., Butcher, K.S., Phillips, M.R., Pakula, K. & Baranowski, J. 2001, 'Cathodoluminescence Investigations of Interfaces in InGaN/Sapphire Structures', Physica Status Solidi B - Basic Research, vol. 228, no. 1, pp. 179-182.
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Godlewski, M., Mackowski, S., Karczewski, G., Goldys, E.M. & Phillips, M.R. 2001, 'Cathodoluminescence Studies of Self-Organised CdTe/ZnTe Quantum Dot Structure Grown by MBE: In-Plane and In-Depth Properties of the System', Semiconductor Science & Technology, vol. 16, pp. 493-496.
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We report the results of low-temperature photoluminescence, room-temperature cathodoluminescence (CL) and scanning CL and electron microscopy of self-organized CdTe/ZnTe quantum dot (QD) structure. The in-depth profiling CL investigations were used to identify the microscopic origin of the CL emissions observed at 2.13, 2.0 2.1 and 2.25 eV. In particular, we distinguish between CL emissions originating from the QD region of the structure and from the underlying buffer layers. Based on these measurements we assign the 2.13 eV CL band to the wetting layer and the 2.0 2.1 eV band to the QD emission. From the study of the in-plane and in-depth CL characteristics we demonstrate large in-plane fluctuations of the CL intensity and discuss their origin.

Kucheyev, S.O., Toth, M., Phillips, M.R., Williams, J.S., Jagadish, C. & Li, G. 2001, 'Cathodoluminescnece Depth Profiling of Ion-Implanted GaN', Applied Physics Letters, vol. 78, no. 1, pp. 34-36.
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Kucheyev, S.O., Toth, M., Phillips, M.R., Williams, J.S., Jagadish, C. & Li, G. 2001, 'Effects of Excitation Density on Cathodoluminescence from GaN', Applied Physics Letters, vol. 79, no. 14, pp. 2154-2156.
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Godlewski, M., Goldys, E.M., Phillips, M.R., Langer, R. & Barski, A. 2000, 'Cathodoluminescence depth-profiling Studies of GaN/ARGaN Quantum-Well Structures', Journal of Materials Research, vol. 15, no. 2, pp. 495-501.

Godlewski, M., Goldys, E.M. & Phillips, M.R. 2000, 'Cathodoluminescence studies of in-plane and in-depth properties of GaN Epilayers', Journal of Luminescence, vol. 87-89, no. 0, pp. 1155-1157.

Godlewski, M., Goldys, E. & Phillips, M.R. 2000, 'Cathodoluminescence Studies of in-plane and in-depth Properties of GaN Epilayers', Journal of Luminescence, vol. 87-89, pp. 1155-1157.

Kucheyev, S.O., Bradby, J., Williams, J.S., Jagadish, C., Toth, M., Phillips, M.R. & Swain, M.V. 2000, 'Nanoindentation of epitaxial GaN Films', Applied Physics Letters, vol. 77, no. 21, pp. 3373-3375.

Masens, C.D., Schulte, J., Phillips, M.R. & Dligatch, S. 2000, 'Ultra Flat Gold Surfaces for Use in Chemical Force Microscopy: Scanning Probe Microscopy Studies of the Effect of Preparation Regime on Surface Morphology', Microscopy & Microanalysis, vol. 6, no. 2, pp. 113-120.

Phillips, M.R. 2000, 'Optical and structural properties of thin films of ZnS grown by atomic layer epitaxy', Journal of Wide Bandgap Materials, vol. 9, no. 1-2, pp. 55-63.

Toth, M., Kucheyev, S.O., Williams, J.S., Jagadish, C., Phillips, M.R. & Li, G. 2000, 'Imaging Charge Trap Distirbution in GaN Using Environmental Scanning Electron Microscopy', Applied Physics Letters, vol. 77, no. 9, pp. 1342-1344.

Toth, M. & Phillips, M.R. 2000, 'Space Charge Artefacts in ESEM Images: Shadowing and Contrast', Microscopy & Microanalysis, vol. 6, no. 2, pp. 775-775.

Toth, M. & Phillips, M.R. 2000, 'The Effects of Space Charge on Contrast in Images Obtained Using the Environmental Scanning Electron Microscope', Scanning, vol. 22, no. 5, pp. 319-325.

Toth, M. & Phillips, M.R. 2000, 'The Role of Induced Contrast in Images Obtained Using the Environmental Scanning Electron Microscope', Scanning, vol. 22, no. 6, pp. 370-379.

Toth, M., Phillips, M.R. & Griffin, B.J. 2000, 'X-ray Microanalysis of Insulators in the ESEM', Microscopy & Microanalysis, vol. 6, no. 2, pp. 786-787.

Fleischer, K., Toth, M., Phillips, M.R., Zou, J., Li, G. & Chua, S.J. 1999, 'Depth profiling of GaN by cathodoluminescence microanalysis', Applied Physics Letters, vol. 74, no. 8, pp. 1114-1116.
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We present the results of a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire. Depth-resolved CL analysis can be used for depth profiling of the yellow luminescence (YL) center concentra

Kim, D., Seong, T., Baik, Y., Kalceff, M.S. & Phillips, M.R. 1999, 'Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition', Diamond and Related Materials, vol. 8, pp. 712-716.
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Diamond films were grown on a.c. bias-enhanced nucleated Si(001) wafers using different CH4 concentrations by microwave plasma chemical vapour deposition. Cathodoluminescence (CL) spectra from the films exhibit emission components which are associated wi

Leon, R., Okuno, J.O., Lawton, R.A., Stevens-Kalceff, M.A., Phillips, M.R., Zou, J., Cockayne, D. & Lobo, C. 1999, 'Dislocation-induced changes in quantum dots: Step alignment and radiative emission', Applied Physics Letters, vol. 74, no. 16, pp. 2301-2303.
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A transition between two types of step alignment was observed in a multilayered InGaAsGaAs quantum-dot (QD) structure. A change to larger QD sizes in smaller concentrations occurred after formation of a dislocation array. Cathodoluminescence (CL) spectra

Phillips, M.R., Toth, M. & Drouin, D. 1999, 'Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope', Applied Physics Letters, vol. 75, no. 1, pp. 76-78.

Toth, M. & Phillips, M.R. 1999, 'Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy', Applied Physics Letters, vol. 75, no. 25, pp. 3983-3985.
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Trace levels of Cr impurities in epitaxial GaN grown on sapphire substrates were investigated using cathodoluminescence (CL) spectroscopy. CL emissions characteristic of Cr in an octahedral crystal field were observed from beta-Ga2O3 overlayers produced

Toth, M., Fleischer, K. & Phillips, M.R. 1999, 'Direct experimental evidence for the role of oxygen in the luminescent properties of GaN', Physical Review B, vol. 59, no. 3, pp. 1575-1578.
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We present experimental evidence of electron-beam-induced diffusion of O and H in unintentionally doped n-type GaN grown on a sapphire substrate. Impurity diffusion was investigated using cathodoluminescence kinetics and imaging at 4 and 300 K and by wav

Godlewski, M., Goldys, E.M., Phillips, M.R., Langer, R. & Barski, A. 1998, 'Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN', Applied Physics Letters, vol. 73, no. 25, pp. 3686-3688.
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In this letter we examine an influence of surface morphology on yellow and edge emissions in wurtzite phase GaN. Our cathodoluminescence measurements show that the yellow emission does not correlate with the surface morphology, but simultaneously the edg

Goldys, E.M., Zuo, H.Y., Tansley, T.L., Phillips, M.R. & Contessa, C.M. 1998, 'Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence', Superlattices and Microstructures, vol. 23, no. 6.

Toth, M., Fleischer, K. & Phillips, M.R. 1998, 'Electron beam induced impurity electro-migration in unintentionally doped GaN', MRS Internet Journal of Nitride Semiconductor Research, vol. 537, p. G3.30.
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Electron beam induced electromigration of O-N(+) and H+ impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dis

Toth, M. & Phillips, M.R. 1998, 'Monte Carlo modeling of cathodoluminescence generation using electron energy loss curves', Scanning, vol. 20, pp. 425-432.

Goldys, E.M., Zuo, H.Y., Phillips, M.R., Contessa, C.M. & Tansley, T.L. 1997, 'Type I and type II alignment of the light hole band in In0.5Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', Journal of Electronic Materials, vol. 26, no. 8, pp. 922-927.

Kalceff, M.S., Phillips, M.R. & Moon, A.R. 1996, 'Electron irradiationinduced changes in the surface topography of silicon dioxide', Journal of Applied Physics, vol. 80, no. 8, pp. 4308-4314.
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The irradiation of crystalline (alpha-SiO2) and amorphous (a-SiO2) silicon dioxide with a stationary electron beam produces characteristic changes in the surface topography. The development of these changes has been investigated using cathodoluminescence

Kim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M.B., Phillips, M.R., Kalceff, M.S., Zou, J. & Cockayne, D.J. 1996, 'Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate', Journal Of Applied Physics, vol. 80, no. 9, pp. 5014-5020.
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Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM)

Wuhrer, R., Yeung, W.Y., Phillips, M.R. & McCredie, G.M. 1996, 'Study on D.C. magnetron sputter deposition of titanium aluminium nitride thin films: effect of aluminium content on coating', Thin Solid Films, vol. 290-291, pp. 339-342.
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Titanium aluminium nitride thin films have been deposited on glass slides using a dual unbalanced d.c. magnetron sputter arrangement with separate titanium and aluminium targets. A range of TiperAl/N compositions were produced by varying the aluminium ta

Kalceff, M.S. & Phillips, M.R. 1995, 'Electron irradiation induced outgrowths from quartz', Journal Of Applied Physics, vol. 77, no. 8, pp. 4125-4127.
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NA

Zhou, B., Li, X., Tansley, T., Butcher, K.S. & Phillips, M.R. 1995, 'Growth of GaN films by combined laser and microwave plasma enhanced chemical vapour deposition', Journal of Crystal Growth, vol. 151, pp. 249-253.
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GaN films have been grown on quartz and (01 (1) over bar 2) sapphire substrates using combined ultraviolet excimer laser and microwave plasma enhanced metalorganic chemical vapour deposition (MOCVD) at a substrate temperature of 500 degrees C. Film compo

Moon, A.R. & Phillips, M.R. 1994, 'Defect clustering and color in Fe,Ti: alpha-Al2O3', Journal Of The American Ceramic Society, vol. 77, no. 2, pp. 356-367.
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A comprehensive theory is presented which successfully explains the polarization, isothermal, and isochronal behavior of the optical absorption bands responsible for the color in blue and blue-green sapphire (Fe,Ti alpha-Al2O3). The experimental study on

Foley, M., Ton-That, C. & Phillips, M.R. 2010, 'Cathodoluminescence characterisation of vapour transport grown ZnO structures', International Conference On Nanoscience and Nanotechnology, Sydney, Australia, February 2010 in Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, ed Andrew Dzurak, IEEE Explorer, Piscataway, NJ, U.S.A., pp. 207-209.
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ZnO structures grown under controlled vapourphase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influence.

Manning, T., Hardy, T., Merklein, M., Wintrebert-Fouquet, M. & Phillips, M.R. 2010, 'A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation', Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, ACT, December 2010 in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, ed NA, IEEE, United States, pp. 139-140.
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Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at

Nenstiel, C., Switaisky, T., Alic, M., Suski, T., Albecht, M., Phillips, M.R. & Hoffmann, A.V. 2010, 'Luminescence of InGaN MQWs grown on misorientated GaN substrates', Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, ACT, December 2010 in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, ed NA, IEEE, United States, pp. 135-136.
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Optoelectronic devices based on InGaN have already been commercialised, however, the Indium content is limited to around 5%. With higher Indium concentration the quantum efficiency decreases, which is thought to be due to increasing inhomogeneity. In thi

Dowd, A.R., Johansson, K.B., Armstrong, N.G., Ton-That, C. & Phillips, M.R. 2006, 'Cathodoluminescence as a method of extracting detailed information from nanophotonics systems: a study of silicon nanocrystals', Conference on Microelectronics - Design, Technology and Packaging II, Brisbane, Australia, December 2005 in Photonics: Design, Technology, And Packaging Ii, ed Abbott, D; Kivshar, YS; RubinszteinDunlop, HH; Fan, S, SPIE-Int Society Optical Engineering, Bellingham, USA, pp. J380-1-J380-10.
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We investigated Si nanocaystal samples produced by high dose 600 keV Si+ implantation of fused silica and annealing using cathodoluminescence (CL). CL spectra collected under 5-25 keV electron irradiation show similar features to reported photoluminescence

Drouin, D., Pauc, N., Phillips, M.R., Poissant, P., Delample, V. & Souifi, A. 2006, 'SEM characterisation of nanodevices and nanomaterials', International Confrence on Nanoscience and Nanotechnology, Brisbane QLD Australia, July 2006 in Proceedings of the 2006 International Conference on Nanosacience and Nanotechnology, ed Jagadish C, Max Lu GQ, IEEE, USA, pp. 596-599.
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The scanning electron microsope (SEM) cna be used to study and characterise a wide variety of materials used in nanoelectronic and photonic applications. Several different techniques make use of this versatile tool. These include voltage conrtast in secondary electron imaging, charge colletion for semiconductor samples and cathodoluminescnece. These techniques are important in device nanofabrication process development and nanomaterials characterisation.

Malguth, E., Hoffmann, A.V., Phillips, M.R. & Gehlhoff, W. 2006, 'Fe-centers in GaN as candidates for spintronics applications', Symposium on GaN, AIN, InN Related Materials, Boston, MA, November 2005 in GaN, AlN, InN And Related Materials, ed Kuball, M; Myers, TH; Redwing, JM; Mukai, T, Materials Research Society, Warrendale, USA, pp. 131-136.
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The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 400 mu m thick freestanding HVPE grown GaN:Fe crystals with

McBean, K.E., Phillips, M.R. & Drouin, D. 2006, 'Effects of lithium doping and post-processing on the cathodoluminescence of zinc oxide nanoparticles', Microscopy & Microanalysis, Chicago, USA, July 2006 in Proceedings of Microscopy & Microanalysis 12, Suppl. 2, 2006, ed Kotula P, Marko M, Scott JH, Gauvin R, Beniac D, Lucas G, McKernan S, Shields J, Cambridge University Press, USA, pp. 1510-1511.
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Zinc oxide (ZnO) is a wide band-gap (3.37 eV) semiconductor with a large exciton binding energy of 60 meV. Because of these properties, ZnO is a good candidate for a wide range of applications, including varistors, phosphors as well as a large range of optical devices. Although the optical properties of ZnO have been extensively studied, there is still intensive debate as to the origin of a number of the luminescence centers observed.

Mokhapati, S., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M.R. 2006, 'Integration of quantum dots devices by selective area epitaxy', International Conference on Nanoscience & Nanotechnology, Brisbane, Australia, July 2006 in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ed Jagadish C, Max Lu GQ, IEEE, USA, pp. 442-445.
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The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot lase integrated with a quantum well waveguide.

Phillips, M.R. & Drouin, D. 2006, 'Comparison of low voltage phosphers', Microscopy & Microanalysis, Chicago, USA, July 2006 in Proceedings of Microscopy & Microanalysis 12, Suppl. 2, 2006, ed kotula P, Mark M, Scott JH, Gauvin R, Beniac D, Lucas G, McKernan 2, Shields J, Cambridge University Press, USA, pp. 1526-1527.
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Progress in field emission display (FED) technology requires the parallel development of phosphors that exhibit high cathodoluminescence (CL) efficiency at low voltage (< 1 kV) excitation and long term CL stability when subjected to high current densities. Five commercial phosphors, ZnO:Zn, YSiO5:Ce, Y2O3:Eu, SrGa2S4:Ce and SrGa2S4:Eu have been studied using low voltage scanning cathodoluminescence microscopy and spectroscopy at 300 K. All samples were powders with a 0.5 + 10 ým particle size (Figure 1). ZnO:Zn was the only specimen that did not display any charging effects at 1 kV when using the in-lens secondary electron image mode, reflecting its good electrical conductivity compared with the other phosphors.

Phillips, M.R. & Morgan, S.W. 2006, 'Enhanced high speed SE imaging using a VPSEM using a Frisch Grid', Microscopy & Microanalysis, Chicago, USA, July 2006 in Proceedings of Microscopy & Microanalysis 12, Suppl. 2 2006, ed Kotula P, marko M, Scott JH, gauvin R, Beniac D, Lucas G, McKernan S, Shields J, Cambridge university Press, USA, pp. 1480-1481.
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Secondary electron (SE) imaging in a variable pressure SEM has necessitated the development of new detector technologies. One approach is to measure the charge, Q, induced on a positive electrode placed at some distance, r, from the specimen stage which is a ground potential. Gas ionization by sufficiently energetic SEs produces electron-ion pairs which are charge separated by the applied electric field. Electrons drift towards the anode causing further gas ionization in a cascade process, and the ions drift towards the stage (cathode). The total Q induced at the anode will include charge components induced by the motion of both electrons, QE, and ions, QI.

Phillips, M.R., Drouin, D. & Pauc, N. 2006, 'Probing carrier behaviour at the nanoscale in gallium nitride using low voltage cathodoluminescence', Microscopy & Microanalysis, Chicago USA, July 2006 in Proceedings of Microscopy & Microanalysis 12, Suppl. 2 2006, ed Kotula P, marko M, Scott JH, Gauvin R, Beniac D, Lucas G, mcKernan S, Shields J, Cambridge Univesity Press, USA, pp. 156-157.
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The increasing application of GaN in blue and UV light emitting diodes and lasers has generated considerable interest in its optical and electrical properties. These optical devices exhibit extremely high emission efficiencies despite the presence of a very high concentration of threading dislocations (108 + 1010 cm-2) that act as non-radiative recombination channels. This perceived contradiction can be been explained by small (< 100 nm) carrier diffusion lengths which effectively negate the effect of the threading dislocations on the radiative recombination efficiency. These short exciton and minority carrier diffusion lengths in GaN can be explored by cathodoluminescence (CL) microscopy and spectroscopy using a SEM equipped with a Schottky field emission gun operating at 1 kV.

Wuhrer, R., Moran, K. & Phillips, M.R. 2006, 'X-ray mapping and post processing', Microscopy & Microanalysis, Chicago USA, July 2006 in Proceedings of Microscopy & Microanalysis 12 Suppl. 2, 2006, ed Kotula P, Marko M, Scott JH, Gauvin R, Beniac D, Lucas G, McKernan S, Shields J, Cambridge university Press, USA, pp. 1404-1405.
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Characterisation of materials frequently involves the determination of variation in composition, structure and microstructure, by the use of a variety of imaging and analysis techniques. There is an increasing need to understand materials phenomena and processes and to learn more about exploiting subtle changes in the distribution of elements in materials technology. Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), wavelength dispersive spectroscopy (WDS) and the combination of these techniques through x-ray mapping (XRM) has become an excellent tool for characterising the distribution of elements and phases in materials. This analytical technique provides a high magnification image related to the distribution and relative abundance of elements within a given specimen and thus makes XRM particularly useful for: + identifying the location of individual elements and + mapping the spatial distribution of specific elements and phases within a sample (material surface).

Wuhrer, R., Moran, K., Phillips, M.R. & Davey, P. 2006, 'X-ray mapping using a multiple-EDS (DUAL) detector', Microscopy & Microanalysis, Chicago USA, July 2006 in Proceedings of Microscopy & Microanalysis 12, suppl. 2, 2006, ed Kotula P, Marko M, Scott JH, Gauvin R, Beniac D, Lucas G, McKernan S, Shields J, Cambridge University Press, USA, pp. 1406-1407.
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X-ray mapping (XRM) is an extremely useful problem solving tool. However, the two major problems for energy dispersive spectroscopy are interpretation of results under non ideal conditions (strong overlap and small peak size relative to background), and the time required to obtain a good quality 256x256 pixel map (1 to 3 hours). XRM has been considered a slow technique, claiming many hours of SEM time and often relegated to out-of-hours (overnight) mapping. With the development of high count rate silicon high resolution drift detectors (SDD) [1, 2] and multi-detector systems [3], the time required to acquire XRM decreases. With a single EDS detector at 20kcps output, a good 512x512 quantitative map can be obtained in around 4 to 8 hours for major elements (>10wt% evenly distributed) and minor elements (>1wt% localised).

Zareie, H.M., Sarikaya, M., McDonagh, A.M., Barber, J., Cortie, M.B. & Phillips, M.R. 2006, 'Self-organised materials: from organic molecules to genetically engineered gold-binding proteins', ICONN, Brisbane, Australia, July 2007 in 2006 International Conference on Nanoscience and Nanotechnology, ed Jagadish C; Mx Lu GQ, IEEE, USA, pp. 517-519.
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We present examples of ordered assemblies of organic and biological molecules on gold(111) surfaces. The first example shows how control over mono or multilayer assemblies of 1,4-phenylenedimethanthiol can be achieved and monitored. The second example shows how monolayers on gold can be prepared using amine groups to anchor aromatic molecules to the surface. A third example whos how ordered assemblies of genetically-engineered inorganic-binding polypeptides can be formed on gold surfaces using a 3-repeat, 14 amino acid gold-binding protein (GBP1).

Butcher, K.S., Ferris, J.M., Phillips, M.R., Wintrebert-Fouquet, M., Jong Wah, J.W., Jovanovic, N. & Vyverman, W. 2005, 'A luminescence study of porous diatoms', Symposium on Current Trends in Nanoscience - From Materials to Applications held at the EMRS Spring Meeting, Strasbourg, France, May 2004 in Materials Science & Engineering C-Biomimetic And Supramolecular Systems, ed N/A, Elsevier, Switzerland, pp. 658-663.
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The cathodoluminescent and photoluminescent properties of the nanoporous silica frustules of various diatom strains and of natural diatom samples are presented. The spectra are observed to be similar to that of pure silica glass and the phenology is ther

Phillips, M.R. & Morgan, S.W. 2005, 'Direct Comparison of Various Gaseous Secondary Electron Detectors in the Variable Pressure Scanning Electron Microscope', Microscopy and Microanalysis, Honolulu, Hawaii, July 2005 in Proceeding Microscopy and Microanalysis vol 11 (Suppl 2), ed R. Price et al., Cambridge University Press, United Kingdom, pp. 398-399.
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The conventional Everhart-Thornely scintillation-photomultiplier secondary electron (SE) detector cannot function at elevated pressures due to the high voltage (~ +12kV) involved in its operation. As a result, SE imaging in the variable pressure scanning electron microscope (VPSEM) has required the development of a new generation of SE detectors that operate under low vacuum conditions. To date, three different methods have been devised to measure the secondary electron (SE) emission signal in a VPSEM. Each of these approaches involves the excitation of the chamber gas by the placement of a low voltage (< +1000V) positively biased electrode in the vicinity of the specimen. A SE image can be obtained by measuring the current induced in either the positive electrode (the gaseous secondary electron detector) or the grounded stage (the ion current detector) or via a photomultiplier that detects light emission from the gas (the gas luminescence detector). In this work, the performance of each of these three low vacuum SE detector types has been compared under identical operating conditions using a Zeiss Supra 55VPSEM and FEI XL30 ESEM.

Wuhrer, R., Huggett, P.G., Moran, K., Phillips, M.R. & Ben-Nissan, B. 2005, 'EBSD and XRM of Phases in Vacuum Cast Composite Alloys', Microscopy and Microanalysis, Honolulu, Hawaii, July 2005 in Proceeding Microscopy and Microanalysis Vol 11 (S2), ed R. Price et al., Cambridge University Press, United Kingdom, pp. 1678-1679.
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There have been a number f new processes developed that allow the joining of very dissimilar materials such as titanium alloys, wear resistant white irons, cast irons and ceramic materials to ferrous (mild steel) and non-ferrous (aluminium) alloys. These new processes have allowed the development of more complex composite shapes to be produced. However, with any new process development, an undertsnating of the mechanism of bonding is required. through the use of x-ray mapping (XRM), chemical phase imaging as well as electron back scattered diffraction (EBSD) analsysis, very useful information on the mass transport across the interface as well as phase segregation, texture variations and phase distribution within the bond interface can be obtained. results from this investigation on a number of bonded materials are presented and the importance of XRM and EBSD in providing a better understanding of the physical and chemical processes involved in metallurgical bonding/welding of dissimilar materials discussed.

Wuhrer, R., Moran, K., Phillips, M.R. & Davey, P. 2005, 'X-ray Mapping using Multiple EDS and WDS Detectors', Microscopy and Microanalysis, Honolulu, USA, July 2005 in Proceeding Microscopy and Microanalysis Vol 11 (Suppl2), ed R. Price et al., Cambridge University Press, United Kingdom, pp. 1678-1679.
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High quality x-ray mapping (XRM) has been used for over 30 years by experienced wavelength dispersive spectroscopy (WDS) operators. Manufacturers have been developing similar techniques using energy dispersive spectroscopy (EDS) over the last 20 years. This has been generally unsuccssful due to a number of problems such as poor computer specifications, cost, time to map and generally poor peak to bacjground ratios (P:B). With improvements in all the above parameters EDS mapping is now gaining in popularity.

Gelhausen, O., Phillips, M.R., Goldys, E.M., Paskova, T., Monemar, B., Strassburg, M. & Hoffmann, A.V. 2004, 'Formation and dissociation of hydrogen-related defect centres in Mg-doped GaN', GaN and Related Alloys, Boston, USA, December 2003 in Materials Research Society, Symposium Proceedings Volume 798, ed Ng, H.H.; Wraback, M.; Hiramatsu, K.; Grandjean, N., Materials Research Society, USA, pp. 497-502.
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Gelhausen, O., Malguth, E., Phillips, M.R., Goldys, E.M., Strassburg, M., Hoffmann, A.V., Graf, T., Gjukic, M. & Stutzmann, M. 2004, 'Optical properties of Mn-doped GaN', GaN and Related Alloys, Boston, USA, December 2003 in Materials Research Society, Symposium Proceedings Volume 798, ed Ng, H.M; Wraback, M.; Hiramatsu, K.; Grandjean, N., Materials Research Society, USA, pp. 569-574.
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Aubin, A., Drouin, D. & Phillips, M.R. 2002, 'ESEM beam current measuring device based on a planar shotty diode', Microscopy & Microanalysis, Canada, August 2002 in Proceedings of Microscopy and microanalysis 2002, Vol 11 (Suppl 2), ed Voelkl E; Piston D; Gauvin R; Lockley AJ; Bailey GW; Mickernan S, Cambridge University Press, New York, USA, pp. 1538CD-1539CD.
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Griffin, B.J., Suvorova, A. & Phillips, M.R. 2002, 'A review of gas-electron interactions imaging and X-ray analysis in variable pressure SEM', 15th International Congress on Electron Microscopy, Durban, South Africa, September 2002 in Proceedings of the 15th International Congress on Electron Microscopy, ed Englebrecht J; Sewell T; Witcombe M, Microscopy Society of Southern Africa, Onderstepoort, South Africa, pp. 215-216.
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Phillips, M.R. & Morgan, S.W. 2002, 'Time dependent behaviour of positive ions in the variable pressure scanning electron microscope', 15th International Congress on Electron Microscopy, Durban, South Africa, September 2002 in Proceedings of the 15th International Congress on Electron Microscopy, ed Englebrecht J; Sewell T; Witcombe M, Microscopy Society of Southern Africa, Onderstepoort, South Africa, pp. 219-220.
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Phillips, M.R. & Morgan, S.W. 2002, 'Time resolved analysis of the positive ion dynamics in the variable pressure scanning electron microscope', Microscopy & Microanalysis, Canada, August 2002 in Proceedings of Microscopy and Microanalysis 2002, Vol 8 (Suppl 2), ed Voelkl E; Piston D; Gauvin R; Lockley AJ; Bailey GW; Mickernan S, Cambridge University Press, New York, USA, pp. 446-477.
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Remond, L.C., Fialin, M., Nockolds, C., Phillips, M.R. & Roques-Carmes, C. 2002, 'Absorption correction of Fe Lab emission from iron oxides', Microscopy & Microanalysis, Canada, August 2002 in Proceedings of Microscopy and microanalysis 2002, Vol 11 (Suppl 2), ed Voelkl E; Piston D; Gauvin R; Lockley AJ; Bailey GW; Mickernan S, Cambridge University Press, New York, USA, pp. 1496CD-1497CD.
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Toth, M., Craven, J.P., Phillips, M.R., Thiel, B.L. & Donald, A.M. 2002, 'X-ray microanalysis of insulators in a variable pressure environment', Microscopy & Microanalysis, Quebec, Canada, August 2002 in Proceedings of Microscopy and Microanalysis 2002, Vol 11 (suppl 2), ed Voelkl E; Piston D; Gauvin R; Lockley AJ; Bailey GW; Mickernan S, Cambridge University Press, New York, USA, pp. 1478-1479.
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Godlewski, M., Ivanov, V., Khachapuridze, A., Narkowicz, R. & Phillips, M.R. 2001, 'Effects of Localisations in CdTe-Based Quantum Well Structures in optical Organic and Inorganic Materials', SPIE, Lithuania, August 2001 in Proceedings of the SPIE, ed Asmontas SP, Grdauskas J, SPIE, USA, pp. 86-91.

Goldys, E.M., Godlewski, M., Phillips, M.R. & Toropov, A.A. 2001, 'Photoluminescence and cathodoluminescence investigations of piezoelectric in GaN/AlGaN quantum Wells', MRS Fall Meeting, Boston, July 2001 in Photolouminescence and Cathodoluminescence Investigations of Piezoelectric Quantum Wells in gaN and Related Alloys - 2000 Proceedings of the MRS Fall Meeting, ed Wetzel C, Shur M, Mishra U, Kishino K, Materials Research Society, Boston, pp. G6.12.1-G6.12.5.
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Whittall, A., Phillips, M.R. & Suetsugu, Y. 2001, 'Cathodoluminescence Emission for Differentiating the Degree of Carbonation in Apatites', 13th Int. Symp. On Ceramics in Medicine, Bologna, November 2001 in Key Engineering Materials Vols. 192-195 Proeedings of the 13th Int. Symp. On Ceramics in Medicine, ed Giannini S, Moroni A, Trans tech Publications Ltd, Switzerland, pp. 179-182.
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Morgan, S.W. & Phillips, M.R. 2001, 'Time Dependent Study of the Positive Ion Current in the Environmental Scanning Electron Microscope (ESEM)', Microscopy & Microanalysis 2001, California, August 2001 in Microscopy & Microanalysis 2001 Proceedings Volume 7 Supplement 2, ed Lyman C, Springer Verlag, New York, pp. 788-789.
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Phillips, M.R. 2001, 'Photoluminescence and cathodoluminescence investigations of piezoelectric quantum wells in GaN and related alloys', Materials Research Society, Boston, MA, USA5, November 2000 in Proceedings MRS Fall Meeting, Materials Research Society, ed C. Wetx=zel et al., Materials Research Society, Warrendale Pennsylvania, pp. G.6.12.1-G.6.12.5.

Phillips, M.R., Griffin, B.J., Drouin, D., Nockolds, C. & Remond, G. 2001, 'X-Ray Micronalaysis in the Environmentl SEM Using Mapping and Fourier Deconvolution Techniques', Microscopy & Microanalysis 2001, California, August 2001 in Microscopy & Microanalysis 2001 Proceedings Volume 7 Supplement 2, ed Lyman C, Springer Verlag, New York, pp. 708-709.
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Griffin, B.J., Nockolds, C., Phillips, M.R. & Remond, G. 2000, 'New Needs for Imaging and X-ray Microanalysis Standards: ESEM, CHIME and Low Voltage Microanalysis', Hawaii, July 2000 in 2nd Conference of the Internatioanl Union Microbeam Analysis Societies, ed Williams DB; Shimizo R, Institute of Physics, Bristol, England, pp. 395-396.

Kucheyev, S.O., Williams, J.S., Tan, H.H., Jagadish, C., Toth, M., Phillips, M.R., Li, G. & Pearton, S.J. 2000, 'Surface Disordering and Nitrogen Loss in GaN Under Ion Bombardment', San Francisco, April 2000 in Materials Research Society, Spring Meeting Proceedings, ed Shul R; Ren F; Murakami M; Pletschen W, Materials Researc Society, USA, pp. 7.9.1-7.9.6.

Phillips, M.R. & Toth, M. 2000, 'Charge Neutralisation of Insulators in anESEM', Hawaii, July 2000 in 2nd Conference of the Internatioanl Union Microbeam Analysis Societies, ed Williams DB; Shimizo R, Institute of Physics, Bristol, England, pp. 273-274.

Remond, G., Nockolds, C., Phillips, M.R. & Cazaux, J. 2000, 'Charging Phenomena of Wide Bandgap Materials in a VP-SEM', Hawaii, July 2000 in 2nd Conference of the Internatioanl Union Microbeam Analysis Societies, ed Williams DB; Shimizo R, Institute of Physics, Bristol, England, pp. 269-270.

Toth, M., Phillips, M.R., Kucheyev, S.O., Williams, J.S., Jagadish, C. & Li, G. 2000, 'Charge Contrast in SE Images Obtained Using the ESEM', Hawaii, July 2000 in 2nd Conference of the Internatioanl Union Microbeam Analysis Societies, ed Williams DB; Shimizo R, Institute of Physics, Bristol, England, pp. 275-276.

Wuhrer, R., Yeung, W.Y., Phillips, M.R. 2000, 'SEM/EDS, AFM and XRD Analysis of Ternary Nitride Coatings Produced by Magnetron Co-Sputtering at Different Nitrogen Pressures', Hawaii, July 2000 in 2nd Conference of the International Union Microbeam Analysis Societies, ed Williams DB; Shimizo R, Institute of Physics, Bristol, England, pp. 449-450.